ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,596, issued on April 21, was assigned to Nexperia BV (Nijmegen, Netherlands). "Lateral power semiconductor device" was invented by Stefano... Read More
ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,597, issued on April 21, was assigned to ROHM Co. LTD. (Kyoto, Japan). "SiC semiconductor device with mesa trench structure and sidewall w... Read More
ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,601, issued on April 21, was assigned to Infineon Technologies Canada Inc. (Ottawa). "Field plate biasing of high electron mobility transi... Read More
ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,602, issued on April 21, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Semiconductor device and manufacture method" w... Read More
ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,603, issued on April 21, was assigned to DENSO Corp. (Kariya-city, Japan). "Silicon carbide semiconductor device, inverter circuit using t... Read More
ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,604, issued on April 21, was assigned to GLOBALFOUNDRIES U.S. Inc (Malta, N.Y.). "Cross couple design for high density standard cells" was... Read More
ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,605, issued on April 21, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.). "IC structure with gate electrode fully within V-shaped ... Read More
ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,606, issued on April 21, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Methods of forming gate structure... Read More
ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,607, issued on April 21, was assigned to Powerchip Semiconductor Manufacturing Corp. (Hsinchu, Taiwan). "Method of manufacturing semicondu... Read More
ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,608, issued on April 21, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Hybrid Fin-dielectric semiconduct... Read More